| PART |
Description |
Maker |
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
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STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| AN79L05 AN79L05M AN79LXXM AN79L04 AN79L05_M AN79L0 |
3-pin negative output voltage regulator (100 mA type)
3-pin negative output voltage regulator (100 mA type) 5 V FIXED NEGATIVE REGULATOR, PBCY3
3-pin negative output voltage regulator (100 mA type) 3针负输出电压调节器（100毫安型）
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):0.0065ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60A; On-Resistance, Rds(on):5.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
General-Purpose Linear IC - Voltage Regulater - 3-Pin Regulator
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):0.017ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:5-D2-PAK; Leaded Process Compatible:No
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Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic
From old datasheet system
JFET-N-CHANNEL SWITCH
Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
HARRIS SEMICONDUCTOR
|
| PT8A990A PT8A991A |
50V Single N-Channel HEXFET Power MOSFET in a SOT-89 (TO-243AA) package
MOSFET; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:55A; On-Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Package/Case:D2PAK; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 9功能遥控器？
|
Mitel Networks, Corp.
|
| AIC809N31CUBG AIC809N31CUTR AIC809N31PUBG AIC809N3 |
N-CH MOSFET SO8BWL 8MOHMS AT 10V PWM OPTIMIZED - LEAD FREE VERSION 3引脚微处理器复位电路
MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6.9A; On-Resistance, Rds(on):26mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC; Leaded Process Compatible:No 3引脚微处理器复位电路
3-PIN MICROPROCESSOR RESET CIRCUITS 3引脚微处理器复位电路
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:12A; On-Resistance, Rds(on):0.0085ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No
MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:11A; On-Resistance, Rds(on):0.011ohm; Package/Case:8-SOIC; Leaded Process Compatible:No; Mounting Type:surface mount; Peak Reflow Compatible (260 C):No
2.54mm Pitch SIL Vertical PC Tail Pin Header, 7mm mating pin height, tin, 2-way
ALL.CLIP, EX-LARGE IEC1010 KIT RoHS Compliant: Yes
(AIC809 / AIC810) 3-PIN MICROPROCESSOR RESET CIRCUITS
|
Analog Integrations, Corp.
Analog Integrations Corporation
AIC[Analog Intergrations Corporation]
|
| AP131 AP131-50Y AP131-15W AP131-15Y AP131-16W AP13 |
1.5A Fast Ultra Low Dropout Linear Regulators 1.5A的快速超低压差线性稳压器
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:75A; On-Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-220; Leaded Process Compatible:No 300mA低压差线性稳压器，带有关
MOSFET, N D-PAK;; Transistor type:MOSFET; Transistor polarity:N Channel; Voltage, Vds max:30V; Case style:TO-252 (D-Pak); Current, Id cont:63A; Current, Idm pulse:50A; Power, Pd:65.2W; Resistance, Rds on:0.0095R;
LED Lamp; Color:Blue; Luminous Intensity (MSCP):210ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
LED Lamp; Color:Blue; Luminous Intensity (MSCP):15ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
LED Lamp; Color:Blue; Luminous Intensity (MSCP):50ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:85A; On-Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TO-220AB; Leaded Process Compatible:Yes
MOSFET, P TO-220MOSFET, P TO-220; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:TO-220AB; Current, Id cont:70A; Current, Idm pulse:240A; Power, Pd:187W; Resistance, Rds on:0.007R; Pin
SENSOR, OPTICAL, PHOTOTRANSISTOR O/P; RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:85A; On-Resistance, Rds(on):0.003ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TO-220; Leaded Process Compatible:No
Optical Sensor (Switch) Reflective; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:32V
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:70A; On-Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
LED Lamp; Color:Yellow; Luminous Intensity (MSCP):2.5; Viewing Angle:60; Forward Current:7mA; Forward Voltage:2.2V; LED Color:Yellow; Leaded Process Compatible:Yes; Lens Style:(L x W x D) 3 x 2.8 x 1.65 mm; Lens Width:3mm
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:85A; On-Resistance, Rds(on):21mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
Optical Sensor (Switch) Transmissive / Slotted Interrupter; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:70V
Optical Sensor (Switch) Reflective; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:70V
LED Lamp; Color:Yellow; Luminous Intensity (MSCP):50; Viewing Angle:60; Voltage Rating:2V; Forward Current:30mA; Forward Voltage:2V; LED Color:Yellow; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:75A; On-Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
LED Lamp; Color:Green; Luminous Intensity (MSCP):1.6; Viewing Angle:60; Forward Current:7mA; Forward Voltage:1.9V; LED Color:Green; Leaded Process Compatible:Yes; Lens Style:(L x W x D) 3 x 2.8 x 1.65 mm; Lens Width:3
MOSFET, N TO-220AB
300mA Low Dropout Linear Regulator with Shutdown
|
Diodes, Inc.
TE Connectivity, Ltd.
ANACHIP[Anachip Corp]
ETC[ETC]
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
|
| MMVL105GT1 ON2289 |
VOLTAGE VARIABLE CAPACITANCE DIODE 2.15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
From old datasheet system
|
Leshan Radio Company, Ltd.
ONSEMI[ON Semiconductor]
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
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